Part Number Hot Search : 
MOC3023X M5226 HT68F016 AD53508 1108HTSN 01504 BAT12003 68HC9
Product Description
Full Text Search

GS8161E18BD-150 - 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165

GS8161E18BD-150_6062705.PDF Datasheet


 Full text search : 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165


 Related Part Number
PART Description Maker
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
   2.5V 512K x 32/36 flowthrough burst synchronous SRAM
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM 512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
AS7C4096A-12TCN AS7C4096A-15JI IC,AS7C4096A-12TCN,TSOP-44 II, SRAM,12NS,512K X 8,5V 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K X 8 STANDARD SRAM, 15 ns, PDSO36
Alliance Memory, Inc.
ALLIANCE MEMORY INC
GS816136CD-300IT 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5 ns, PBGA165
GSI Technology, Inc.
TC554001FTI-85 TC554001FTI-10 512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
Toshiba Corporation
Toshiba, Corp.
IS61VF51218A-6.5B3 256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
Integrated Silicon Solution, Inc.
GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
Electronic Theatre Controls, Inc.
GSI Technology
CY7C1062AV25-10BGC CY7C1062AV25-10BGI 512K x 32 Static RAM 512K X 32 STANDARD SRAM, 10 ns, PBGA119
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
 
 Related keyword From Full Text Search System
GS8161E18BD-150 integrated circuit GS8161E18BD-150 supply GS8161E18BD-150 image sensor GS8161E18BD-150 Price GS8161E18BD-150 dropout
GS8161E18BD-150 fet GS8161E18BD-150 interface GS8161E18BD-150 Price GS8161E18BD-150 texas GS8161E18BD-150 where to buy
 

 

Price & Availability of GS8161E18BD-150

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.55302906036377